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  Datasheet File OCR Text:
 Semiconductor
SDB310WMF
Schottky Barrier Diode
Features
* Low power rectified * Silicon epitaxial type * High reliability
Ordering Information
Type No. SDB310WMF Marking DB3 Package Code SOT-23F
Outline Dimensions
2.40.1 1.60.1
unit : mm
1
2.90.1 1.90 BSC
3
0.40.05
2
0.150.05
3
1
0.90.1 0~0.1
2
PIN Connections 1. Anode 2. Cathode 3. Cathode, Anode
KSD-2062-000
1
SDB310WM
Absolute maximum ratings
Characteristic
Reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current(10ms) Power dissipation Junction temperature Storage temperature
Ta=25C
Symbol
VR IFRM IF IFSM PD Tj Tstg
*
Ratings
30 0.5 0.2 2 150 150 -55 ~ 150
Unit
V A A A mW C C
* : = D/T =0.33 (T<1S) * : Unit ratings. Total rating=Unit ratingx1.5
Electrical Characteristics
Characteristic
Forward voltage 1 Forward voltage 2 Reverse current Total capacitance Reverse recovery time
Ta=25C
Symbol
VF(1) VF(2) IR CT trr IF=10mA IF=30mA VR=30V
Test Condition
Min. Typ. Max.
0.4 0.5 1 10 5
Unit
V V A pF ns
VR=1V, f=1MHz IF= IR=10mA, IRR= 1mA, RL=100
KSD-2062-000
2
SDB310WMF
Electrical Characteristic Curves
Fig. 1 IF-VF Fig. 2 IR -VR
Fig. 3 CT-VR
KSD-2062-000
3


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